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Preliminary Technical Data
FEATURES
Allows Safe Board Insertion and Removal from a Live Backplane Controls Supply Voltages from 3.15 V to 14V Precision Current Sense Amplifier Precision Voltage Input 12-bit ADC for Current and Voltage Readback Charge Pumped Gate Drive for External N-FET Switch Adjustable Analog Current Limit with Circuit Breaker Fast Response Limits Peak Fault Current Automatic Retry or Latch-Off On Current Fault Programmable hot swap timing via TIMER pin Active-high ON pin I2C Fast Mode compliant interface (400 KHz max) Two address pins allow 16 devices on the same bus 10-lead MSOP package
Hot Swap Controller and I2C Power Monitor with Convert Pin ADM1176
FUNCTIONAL BLOCK DIAGRAM
ADM1176
Vcc + V
Mux
0 12-Bit ADC 1 SDA I2C SCL A1 A0
A
SENSE Current Sense Amplifier
I
ON
1.3V
+ UV Comparator
FET Drive
GATE
GND
TIMER
APPLICATIONS
Power Monitoring/Power Budgeting Central office Equipment Telecommunication and Datacommunication Equipment PC/Servers
APPLICATIONS DIAGRAM
3.15V - 14V
R SENSE
N-Channel FET
GENERAL DESCRIPTION
The ADM1176 is an integrated hot-swap controller which offers digital current and voltage monitoring via an on-chip 12-bit ADC, communicated through an I2C interface. An internal current sense amplifier senses voltage across the sense resistor in the power path via the VCC and SENSE pins. The ADM1176 limits the current through this resistor by controlling the gate voltage of an external N-channel FET in the power path, via the GATE pin. The sense voltage (and hence the inrush current) is kept below a preset maximum. The ADM1176 protects the external FET by limiting the time that it spends with the maximum current running in it. This current limit period is set by the choice of capacitor attached to the TIMER pin. Additionally, the device provides protection from overcurrent events at times after the hot-swap event is complete. In the case of a short-circuit event the current in the sense resistor will exceed an overcurrent trip threshold, and the FET will be switched off immediately by pulling down the GATE pin.
Vcc
SENSE
CONTROLLER
GATE
ADM1176
ON SDA SCL TIMER GND A1 A0 SDA SCL
P=VI
A 12-bit ADC can measure the current seen in the sense resistor, and also the supply voltage on the VCC pin. An industry standard I2C interface allows a controller to read current and voltage data from the ADC. Measurements can be initiated by an I2C command. Alternatively the ADC can run continuously and the user can read the latest conversion data whenever it is required. Up to 4 unique I2C addresses can be created by the way the ADR pin is connected. The ADM1176 is packaged in a 10-lead MSOP package.
Rev.PrD_May_06
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. www.analog.com Tel: 781.329.4700 Fax: 781.326.8703 (c) 2006 Analog Devices, Inc. All rights reserved.
ADM1176
TABLE OF CONTENTS
REVISION HISTORY
May 06--Revision PrD: Preliminary Version
Preliminary Technical Data
Rev. PrD | Page 2 of 16
Preliminary Technical Data
ADM1176--Specifications
Table 1. VCC = 3.15V to 14V, TA = -40C to +85C, Typical Values at TA = +25C unless otherwise noted. Parameter
VCC Pin Operating Voltage Range, VVCC Supply Current, ICC Undervoltage Lockout, VUVLO Undervoltage Lockout Hysteresis, VUVLOHYST ON Pin Input Current, IINON Trip Threshold, VONTH Trip Threshold Hysteresis, VONHYST Glitch Filter Time SENSE Pin Input Leakage, ISENSE Overcurrent Fault Timing Threshold, VOCTIM Overcurrent Limit Threshold, VLIM M Fast Overcurrent Trip Threshold, VOCFAST GATE Pin Drive Voltage, VGATE Drive Voltage, VGATE Drive Voltage, VGATE Pullup Current Pulldown Current Pulldown Current TIMER Pin Pull-Up Current (Power On Reset), ITIMERUPPOR Pull-Up Current (Fault Mode), ITIMERUPFAULT Pull-Down Current (Retry Mode), ITIMERDNRETRY
ADM1176
Min
3.15
Typ
Max
14 3
Units
V mA V mV nA V mV s A mV mV mV
Conditions
1.6 2.8 25 -100 0 1.3 80 3
VVCC Rising
+100
ON rising
-1 85 90 100
+1
110 115
VSENSE = VVCC VOCTRIM = (VVCC - VSENSE), Fault timing starts on the TIMER pin VLIM = (VVCC - VSENSE), Closed loop regulation to a current limit VOCFAST = (VVCC - VSENSE), Gate pulldown current turned on VGATE - VVCC, VVCC = 3.15 V VGATE - VVCC, VVCC = 5 V VGATE - VVCC, VVCC = 13.2 V VGATE = 0 V VGATE = 3 V, VVCC > UVLO VGATE = 3 V, VVCC < UVLO Initial Cycle, VTIMER = 1 V During Current Fault, VTIMER = 1 V After current fault and during a cool-down period on a retry device, VTIMER = 1 V Normal Operation, VTIMER = 1 V TIMER rising TIMER falling Low state Resistor to ground state, load pin with specified resistance for 01 decode Open state, maximum load allowed on A0 or A1 pin for 10 decode High state VADR = 2.0 V to 5.5 V VADR = 0 V to 0.8 V
5 6 5 10
7 8 7 12 2 25 -5 -60 2
10 12 10 14
V V V A mA mA A A A
-4 -48
-6 -72 2.5
Pull-Down Current, ITIMERDN Trip Threshold High, VTIMERH Trip Threshold Low, VTIMERL A0, A1 Pins Set address to 00, VADRLOWV Set address to 01, RADRLOWZ
1.235 0.18 0 135
100 1.3 0.2
1.365 0.22 0.8 165
A V V V k
150
Set address to 10, IADRHIGHZ
-1
+1
A
Set address to 11, VADRHIGHV Input current for 00 decode, IADRLOW Input current for 11 decode, IADRHIGH
2 -40 3 -22
5.5 10
V A A
Rev. PrD | Page 3 of 16
ADM1176
Parameter
MONITORING ACCURACY1 Current Sense Absolute Accuracy
Preliminary Technical Data
Min
TBD -2.3 TBD -2.5 TBD -2.8 -3.5 0.01 105 -1.5 -1.5 +1.5 +1.5 6.656 26.6282 0.99 2.31 20+0.1CB 50 -10 5 400 600 1300 600 100 600 1300 400 0.4 250 250 +10
Typ
Max
TBD +2.3 TBD +2.5 TBD +2.8 +3.5
Units
% % % % % % % %/C mV % % V V V V V ns ns A pF kHz ns ns ns ns ns ns pF
Conditions
VSENSE = 75 mV VSENSE = 75 mV, @ 0C to +70C VSENSE = 50 mV VSENSE = 50 mV, @ 0C to +70C VSENSE = 25 mV VSENSE = 25mV, @ 0C to +70C VSENSE = 12.5 mV, @ 25C
Current Sense Accuracy, TC VSENSE for ADC full-scale Voltage Sense Accuracy
VCC for ADC full-scale, low range VCC for ADC full-scale, high range I2C TIMING3 Low level input voltage, VIL High level input voltage, VIH Low level output voltage on SDA, VOL Output fall time on SDA from VIHMIN to VILMAX Maximum width of spikes suppressed by input filtering on SDA and SCL pins Input current, II, on SDA/SCL when not driving out a logic low Input capacitance on SDA/SCL SCL clock frequency, fSCL LOW period of the SCL clock HIGH period of the SCL clock Setup time for a repeated START condition, tSU;STA SDA output data hold time, tHD;DAT Set-up time for a stop condition, tSU;STO Bus free time between a STOP and a START condition, tBUF Capacitive load for each bus line
1
VVCC = 3.15 V to 5.5V (VRANGE = 1) VVCC = 10.8 V to 26V (VRANGE = 1) VRANGE = 1 VRANGE = 0
IOL = 3mA CB = bus capacitance from SDA to GND
Monitoring accuracy is a measure of the error in a code that is read back for a particular voltage/current. This is a combination of amplifier error, reference error and ADC error. 2 The maximum operating voltage is limited to VVCC =14 V which corresponds to an ADC code of 871. 3 The following conditions apply to all timing specifications: VBUS =3.3V, TA =25C. All timings refer to VIHMIN and VILMAX.
Rev. PrD | Page 4 of 16
Preliminary Technical Data
ADM1176
Absolute Maximum Ratings
Table 2. ADM1176 Absolute Maximum Ratings
Parameter VCC Pin SENSE Pins TIMER Pin ON Pin GATE Pin SDA, SCL Pins A0, A1 Pins Power Dissipation Storage Temperature Operating Temperature Range Lead Temperature Range (Soldering 10 sec) Junction Temperature Rating 20V 20V -0.3V to +6V -0.3V to +20V 30V -0.3V to +6V -0.3V to +6V TBD -65C to +125C -40C to +85C 300C 150C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Ambient temperature = 25C, unless otherwise noted.
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. PrD | Page 5 of 16
ADM1176
PIN CONFIGURATIONS
Vcc SENSE ON GND TIMER
1 2 3 4 5
Figure 1. Pin Configurations
Preliminary Technical Data
10
GATE A1 A0 SCL
ADM1176 TOP VIEW
9 8
(NOT TO SCALE) 7 SDA
6
PIN FUNCTIONAL DESCRIPTIONS
Table 3.
Pin No. 1 2 Name VCC SENSE Description Positive supply input pin. The operating supply voltage range is between 3.15 V to 14 V. An undervoltage lockout (UVLO) circuit resets the ADM1176 when a low supply voltage is detected. Current sense input pin. A sense resistor between the VCC and SENSE pins sets the analog current limit. The hotswap operation of the ADM1176 controls the external FET gate to maintain the (VVCC-VSENSE) voltage at 100 mV or below. Undervoltage input pin. Active high pin. An internal ON comparator has a trip threshold of 1.3 V and the output of this comparator is used as an enable for the hotswap operation. With an external resistor divider from VCC to GND, this pin can be used to enable the hotswap operation one a specific voltage on VCC, giving an undervoltage function. Chip Ground Pin Timer pin. An external capacitor CTIMER sets a 270 ms/F initial timing cycle delay and a 21.7 ms/F fault delay. The GATE pin turns off whenever the TIMER pin is pulled beyond the upper threshold. An overvoltage detection with an external zener can be used to force this pin high. I2C Clock Pin. Open-drain output requires an external resistive pull-up. I2C Data I/O Pin. Open-drain output requires an external resistive pull-up. I2C Address Pin. This pin can be tied low, tied high, left floating or tied low through a resistor. Sixteen different I2C address options are available depending on the external configuration of the A0 and A1 pins. I2C Address Pin. This pin can be tied low, tied high, left floating or tied low through a resistor. Sixteen different I2C address options are available depending on the external configuration of the A0 and A1 pins. GATE Output Pin. This pin is the high side gate drive of an external N-channel FET. This pin is driven by the FET drive controller which utilises a charge pump to provide a 12 A pull-up current to charge the FET gate pin. The FET drive controller regulates to a maximum load current (100 mV through the sense resistor) by modulating the GATE pin.
3
ON
4 5
GND TIMER
6 7 8 9 10
SCL SDA A0 A1 GATE
Rev. PrD | Page 6 of 16
Preliminary Technical Data
OVERVIEW OF THE HOTSWAP FUNCTION
When circuit boards are inserted into a live backplane, discharged supply bypass capacitors would draw large transient currents from the backplane power bus as they charge. Such transient currents can cause permanent damage to connector pins, and dips on the backplane supply which could reset other boards in the system. The ADM1176 is designed to turn a circuit board's supply voltage on and off in a controlled manner, allowing the circuit board to be safely inserted into or removed from a live backplane. The ADM1176 can reside either on the backplane or on the circuit board itself. The ADM1176 controls the "inrush" current to a fixed maximum level by modulating the gate of an external Nchannel FET placed between the live supply rail and the load. This "hotswap" function protects the card connectors and the FET itself from damage and also limits any problems which could be caused by the high current loads on the live supply rail. The ADM1176 holds the GATE pin down (and thus the FET is held off) until a number of conditions are met. An undervoltage lockout circuit ensures that the device is being provided with an adequate input supply voltage. Once this has been successfully detected, the device goes through an initial timing cycle to provide a delay before it will attempt to hotswap. This delay ensures that the board is fully seated in the backplane before the board is powered up. Once the initial timing cycle is complete, the hotswap function is switched on under control of the ON pin. When asserted high the hotswap operation starts. The ADM1176 charges up the gate of the FET to turn on the load. It will continue to charge up the GATE pin until the linear current limit (set to 100 mV/RSENSE) is reached. For some combinations of low load capacitance and high current limit, this limit may not be reached before the load is fully charged up. If current limit is reached, the ADM1176 will regulate the GATE pin to keep the current at this limit. For currents above the overcurrent fault timing threshold, nominally 100 mV/ RSENSE, the current fault is timed by sourcing a current out to the TIMER pin. If the load becomes fully charged before the fault current limit time is reached (when the TIMER pin reaches 1.3 V), the current will drop below the overcurrent fault timing threshold, the ADM1176 will then charge the GATE pin higher to fully enhance the FET for lowest RON, and the TIMER pin will be pulled down again. If the fault current limit time is reached before the load drops below the current limit, a fault has been detected, and the hotswap operation is aborted by pulling down on the GATE pin to turn off the FET. The ADM1176-2 latches off at this point and will only attempt to hotswap again when the ON pin is deasserted then asserted again. The ADM1176-1 will retry the
ADM1176
hotswap operation indefinitely, keeping the FET in SOA by using the TIMER pin to time a cool-down period in between hotswap attempts. The current and voltage threshold combinations on the TIMER pin set the retry duty cycle to 3.8%. The ADM1176 is designed to operate over a range of supplies from 3.15 V to 14 V.
UNDERVOLTAGE LOCKOUT
An internal undervoltage lockout (UVLO) circuit resets the ADM1176 if the VCC supply is too low for normal operation. The UVLO has a low-to-high threshold of 2.8 V, with 25 mV hysteresis. Above 2.8 V supply voltage, the ADM1176 will start the initial timing cycle.
ON FUNCTION
The ADM1176-1 has an active-high ON pin. The ON pin is the input to a comparator which has a low-to-high threshold of 1.3 V, an 80 mV hysteresis and a glitch filter of 3 s. A low input on the ON pin turns off the hotswap operation by pulling the GATE pin to ground, turning off the external FET. The TIMER pin is also reset by turning on a pull-down current on this pin. A low-to-high transition on the ON pin starts the hotswap operation. A 10 k pull-up resistor connecting the ON pin to the supply is recommended. Alternatively, an external resistor divider at the ON pin can be used to program an undervoltage lockout value higher than the internal UVLO circuit, thereby setting a voltage level at the VCC supply where the hotswap operation is to start. An RC filter can be added at the ON pin to increase the delay time at card insertion if the initial timing cycle delay is insufficient.
TIMER FUNCTION
The TIMER pin handles several timing functions with an external capacitor, CTIMER. There are two comparator thresholds: VTIMERH (0.2 V) and VTIMERL (1.3 V). The four timing current sources are a 5 A and a 60 A pull-up, and a 2 A and a 100 A pull-down. The 100 A is a non-ideal current source approximating a 7 k resistor below 0.4 V. These current and voltage levels, together with the value of CTIMER that the user chooses, determine the initial timing cycle time, the fault current limit time, and the hotswap retry duty cycle.
Rev. PrD | Page 7 of 16
ADM1176
GATE AND TIMER FUNCTION DURING A HOTSWAP
During hot insertion of a board onto a live supply rail at VCC, the abrupt application of supply voltage charges the external FET drain/gate capacitance, which could cause an unwanted gate voltage spike. An internal circuit holds GATE low before the internal circuitry wakes up. This reduces the FET current surges substantially at insertion. The GATE pin is also held low during the initial timing cycle, and until the ON pin has been taken high to start the hotswap operation. During hotswap operation the GATE pin is first pulled up by a 12 A current source. If the current through the sense resistor reaches the overcurrent fault timing threshold, Voctim, then a pull-up current of 60 A on the TIMER pin is turned on, and this pin starts charging up. At a slightly higher voltage in the sense resistor, the error amplifier servos the GATE pin to maintain a constant current to the load by controlling the voltage across the sense resistor to the linear current limit, VLIM. A normal hotswap will complete when the board supply capacitors near full charge and the current through the sense resistor drops, to eventually reach the level of the board load current. As soon as the current drops below the overcurrent fault timing threshold, the current into the TIMER pin will switch from being a 60 A pull-up to a 100 A pull-down. The ADM1176 will then drive the GATE voltage as high as it can to fully enhance the FET and reduce RON losses to a minimum. A hotswap will fail if the load current fails to drop below the overcurrent fault timing threshold, VOCTIM, before the TIMER pin has charged up to 1.3 V. In this case the GATE pin is then pulled down with a 2 mA current sink. The GATE pull-down will stay on until a hotswap retry starts, which can be forced by de-asserting then re-asserting the ON pin, or the device will retry automatically after a cool-down period, on the ADM11761. The ADM1176 also features a method of protection from sudden load current surges, such as a low impedance fault, when the current seen across the sense resistor may go well beyond the linear current limit. If the fast overcurrent trip threshold, VOCFAST, is exceeded, the 2 mA GATE pull-down is turned on immediately. This pulls the GATE voltage down quickly to enable the ADM1176 to limit the length of the current spike that gets through, and also to bring the current through the sense resistor back into linear regulation as quickly as possible. This protects the backplane supply from sustained overcurrent conditions, which may otherwise have caused problems with the backplane supply level dropping too low.
Preliminary Technical Data
CALCULATING CURRENT LIMITS AND FAULT CURRENT LIMIT TIME
The nominal linear current limit is determined by a sense resistor connected between the VCC and SENSE pins as given by the equation below: ILIMIT(NOM) = VLIM(NOM)/RSENSE = 100 mV/RSENSE The minimum linear fault current is given by Equation 2: ILIMIT(MIN) = VLIM(MIN)/RSENSE(MAX) = 90 mV/RSENSE(MAX) The maximum linear fault current is given by Equation 3: ILIMIT(MAX) = VLIM(MAX)/RSENSE(MIN) = 110 mV/RSENSE(MIN) The power rating of the sense resistor should be rated at the maximum linear fault current level. The minimum overcurrent fault timing threshold current is given by IOCTIM(MIN) = VOCTIM(MIN)/RSENSE(MAX) = 85 mV/RSENSE(MAX) (4) (3) (2) (1)
The maximum fast overcurrent trip threshold current is given by IOCFAST(MAX) = VOCFAST(MAX)/RSENSE(MIN) = 115 mV/RSENSE(MIN) (5) The fault current limit time is the time that a device will spend timing an overcurrent fault, and is given by tFAULT ~= 21.7 x CTIMER ms/F (6)
INITIAL TIMING CYCLE
When VCC is first connected to the backplane supply, there is an internal supply (time-point (1) in Figure 2) in the ADM1176 which needs to charge up. A very short time later (significantly less than 1 ms) the internal supply will be fully up and, since the undervoltage lockout voltage has been exceeded at VCC, the device will come out of reset. During this first short reset period the GATE pin is held down with a 25 mA pulldown current, and the TIMER pin is pulled down with a 100 A current sink. The ADM1176 then goes through an initial timing cycle. At point (2) the TIMER pin is pulled high with 5 A. At time point (3), the TIMER reaches the VTIMERL threshold and the first portion of the initial cycle ends. The 100 A current source then pulls down the TIMER pin until it reaches 0.2 V at time point (4). The initial cycle delay (time point 2 to time point 4) is related to CTIMER by equation: tINITIAL ~= 270 x CTIMER ms/F (7)
Rev. PrD | Page 8 of 16
Preliminary Technical Data
When the initial timing cycle terminates, the device is ready to start a hotswap operation (assuming ON pin is asserted). In the example shown in Figure 2, the ON pin was asserted at the same time as VCC was applied, so the hotswap operation starts immediately after time-point (4). At this point the FET gate is charged up with a 12 A current source. At timepoint (5) the threshold voltage of the FET is reached and the load current begins to flow. The FET is controlled to keep the sense voltage at 100 mV (this corresponds to a maximum load current level defined by the value of RSENSE). At timepoint (6) VGATE and VOUT have reached their full potential and the load current has settled to its nominal level. Figure 3 illustrates the situation where the ON pin is asserted after VVCC is applied.
(1) (2) (3) (4) (5) (6)
ADM1176
(1) (2) (3)(4) (5)(6) (7)
V VCC
V ON
V TIMER
V GATE
V SENSE
V VCC
V OUT
V ON
INITIAL TIMING CYCLE
V TIMER
Figure 3. Start-up (ON asserts after power is applied)
V GATE
HOTSWAP RETY ON ADM1176-1
V SENSE
With the ADM1176-1 the device will turn off the FET after an overcurrent fault, and will then use the TIMER pin to time a delay before automatically retrying to hotswap. As with all ADM1176 devices, on overcurrent fault is timed by charging the TIMER cap with a 60 A pull-up current, and when the TIMER pin reaches 1.3 V the fault current limit time has been reached and the GATE pin is pulled down. On the ADM1176-1, the TIMER pin is then pulled down with a 2 A current sink. When the TIMER pin reaches 0.2 V, it will automatically restart the hotswap operation. The cool down period is related to CTIMER by equation: tCOOL ~ = 550 x CTIMER ms/F The retry duty cycle is thus given by tFAULT/(tCOOL + tFAULT ) x 100% = 3.8% (9) (8)
V OUT
INITIAL TIMING CYCLE
Figure 2. Start-up (ON asserts as power is applied)
Rev. PrD | Page 9 of 16
ADM1176
VOLTAGE AND CURRENT READBACK
In addition to providing hot swap functionality, the ADM1176 also contains the components to allow voltage and current readback over an I2C bus. The voltage output of the current sense amplifier and the voltage on the VCC pin are fed into a 12-bit ADC via a multiplexer. The device can be instructed to convert voltage and/or current at any time during operation via an I2C command. When all conversions are complete the voltage and/or current values can be read out to 12-bit accuracy in two or three bytes.
Preliminary Technical Data
GENERAL I2C TIMING
and Figure 5 show timing diagrams for general read and write operations using the I2C. The I2C specification defines specific conditions for different types of read and write operation, which are discussed later. The general I2C protocol operates as follows: 1. The master initiates data transfer by establishing a START condition, defined as a high to low transition on the serial data line SDA while the serial clock line SCL remains high. This indicates that a data stream will follow. All slave peripherals connected to the serial bus respond to the START condition, and shift in the next 8 bits, consisting of a 7-bit slave address (MSB first) plus a R/W bit, which determines the direction of the data transfer, i.e. whether data will be written to or read from the slave device (0 = write, 1 = read). The peripheral whose address corresponds to the transmitted address responds by pulling the data line low during the low period before the ninth clock pulse, known as the acknowledge bit, and holding it low during the high period of this clock pulse. All other devices on the bus now remain idle while the selected device waits for data to be read from or written to it. If the R/W bit is a 0, the master will write to the slave device. If the R/W bit is a 1, the master will read from the slave device. 2. Data is sent over the serial bus in sequences of nine clock pulses, eight bits of data followed by an acknowledge bit from the slave device. Data transitions on the data line must occur during the low period of the clock signal and remain stable during the high period, as a low to high transition when the clock is high may be interpreted as a STOP signal. If the operation is a write operation, the first data byte after the slave address is a command byte. This tells the slave device what to expect next. It may be an instruction such as telling the slave device to expect a block write, or it may simply be a register address that tells the slave where subsequent data is to be written. Since data can flow in only one direction as defined by the R/W bit, it is not possible to send a command to a slave device during a read operation. Before doing a read operation, it may first be necessary to do a write operation to tell the slave what sort of read operation to expect and/or the address from which data is to be read.
SERIAL BUS INTERFACE
Control of the ADM1176 is carried out via the Inter-IC Bus (I2C). This interface is compatible with fastmode I2C (400 kHz max). The ADM1176 is connected to this bus as a slave device, under the control of a master device.
IDENTIFYING THE ADM1176 ON THE I2C BUS
The ADM1176 has a 7-bit serial bus slave address. When the device is powered up, it will do so with a default serial bus address. The three MSBs of the address are set to 100, the four LSBs are determined by the state of the A0 and A1 pins. There are sixteen different configurations available on the A0 and A1 pins which correspond to sixteen different I2C addresses for the four LSBs. These are explained in Table 4 below. This scheme allows sixteen ADM1176 devices to operation on a single I2C bus. Table 4. Setting I2C Addresses via the A0 and A1 Pins
A0 Configuration Low state Low state Low state Low state Resistor to GND Resistor to GND Resistor to GND Resistor to GND Floating Floating Floating Floating High state High state High state High state A1 Configuration Low state Resistor to GND Floating High state Low state Resistor to GND Floating High state Low state Resistor to GND Floating High state Low state Resistor to GND Floating High state Address 0x80 0x88 0x90 0x98 0x82 0x8A 0x92 0x9A 0x84 0x8C 0x94 0x9C 0x86 0x8E 0x96 0x9E
Rev. PrD | Page 10 of 16
Preliminary Technical Data
3. When all data bytes have been read or written, stop conditions are established. In WRITE mode, the master will pull the data line high during the 10th clock pulse to assert a STOP condition. In READ mode, the master device will release the SDA line during the low period
ADM1176
before the ninth clock pulse, but the slave device will not pull it low. This is known as No Acknowledge. The master will then take the data line low during the low period before the 10th clock pulse, then high during the 10th clock pulse to assert a STOP condition.
1 SCL SDA 0 1 0 1 1 A1 A0 R/W
9
1
9
D7
D6
D5
D4
D3
D2
D1
D0 ACK. BY SLAVE 9
START BY MASTER FRAME 1 SLAVE ADDRESS 1 SCL (CONTINUED) SDA (CONTINUED) D7 D6 D5 D4 D3 D2 D1
ACK. BY SLAVE 9 1
FRAME 2 COMMAND CODE
D0 ACK. BY SLAVE
D7
D6
D5
D4
D3
D2
D1
D0 ACK. BY SLAVE STOP BY MASTER
FRAME 3 DATA BYTE
FRAME N DATA BYTE
Figure 4. General I2C Write Timing Diagram
1 SCL 0 0 A1 A0 R/W
9
1
9
SDA
1
1
1
D7
D6
D5
D4
D3
D2
D1
D0 ACK. BY MASTER
START BY MASTER FRAME 1 SLAVE ADDRESS 1 SCL (CONTINUED) SDA (CONTINUED) D7 D6 D5 D4 D3 D2
ACK. BY SLAVE
FRAME 2 DATA BYTE 9 1
9
D1
D0 ACK. BY MASTER
D7
D6
D5
D4
D3
D2
D1
D0 NO ACK. STOP BY MASTER
FRAME 3 DATA BYTE
FRAME N DATA BYTE
Figure 5. General I2C Read Timing Diagram
tLOW
SCL
tR
tF
tHD;STA
tHD;STA
tHIGH tHD;DAT tSU;DAT
tSU;STA
tSU;STO
SDA
tBUF
P S
S
P
Figure 6. Serial Bus Timing Diagram
Rev. PrD | Page 11 of 16
ADM1176
WRITE AND READ OPERATIONS
The I2C specification defines several protocols for different types of read and write operations. The ones used in the ADM1176 are discussed below. The following abbreviations are used in the diagrams: Table 5. I2C abbreviations
S P R W A N START STOP READ WRITE ACKNOWLEDGE NO ACKNOWLEDGE
Preliminary Technical Data
WRITE COMMAND BYTE
In this operation the master device sends a command byte to the slave device, as follows: 1. 2. 3. 4. The master device asserts a start condition on SDA. The master sends the 7-bit slave address followed by the write bit (low). The addressed slave device asserts ACK on SDA. The master sends the command byte. The command byte is identified by an MSB =0. (An MSB =1 indicates an Extended Register Write. See next section.) The slave asserts ACK on SDA. The master asserts a STOP condition on SDA to end the transaction.
1 2 3 4 56 SLAVE COMMAND S WA AP ADDRESS BYTE
QUICK COMMAND
This operation allows the master check if the slave is present on the bus. This entails the following: 1. 2. 3. The master device asserts a start condition on SDA. The master sends the 7-bit slave address followed by the write bit (low). The addressed slave device asserts ACK on SDA.
1 S 2 3 SLAVE WA ADDRESS
5. 6.
Figure 8. Command Byte Write
The seven LSBs of the command byte are used to configure and control the ADM1176. Details of the function of each bit are provided in Table 6.
Figure 7. Quick Command
Table 6. Command Byte Operations
Bit C0 C1 C2 C3 C4 Default 0 0 0 0 0 Name V_CONT V_ONCE I_CONT I_ONCE VRANGE Function Set to convert voltage continuously. If readback is attempted before the first conversion is complete, the ADM1176 will ACK and return all zeros in the returned data. Set to convert voltage once. Self-clears. I2C will NACK an attempted read until ADC conversion is complete. Set to convert voltage continuously. If readback is attempted before the first conversion is complete, the ADM1176 will ACK and return all zeros in the returned data. Set to convert current once. Self-clears. I2C will NACK an attempted read until ADC conversion is complete. Selects different internal attenuation resistor networks for voltage readback. A "0" in C4 selects a 14:1 voltage divider. A "1" in C4 selects a 7:2 voltage divider. With an ADC full-scale of 1.902 V, the voltage at the VCC pin for an ADC full-scale result is 26.63 V for VRANGE = 0 and 6.66 V for VRANGE = 1. Unused Status Read. When this bit is set the data byte read back from the ADM1176 will be the STATUS byte. This contains the status of the device alerts. See Table14 for full details of the status byte.
C5 C6
0 0
N/A STATUS_RD
Rev. PrD | Page 12 of 16
Preliminary Technical Data
WRITE EXTENDED BYTE
In this operation the master device writes to one of the three extended registers of the slave device, as follows: 1. 2. 3. 4. The master device asserts a start condition on SDA. The master sends the 7-bit slave address followed by the write bit (low). The addressed slave device asserts ACK on SDA. The master sends the register address byte. The MSB of this byte is set to 1 to indicate an extended register write. The two LSBs indicate which of the three extended registers will be written to (see Table 7). All other bits should be set to 0. The slave asserts ACK on SDA. The master sends the command byte. The command byte is identified by an MSB = 0. (An MSB = 1 indicates an Extended Register Write. See next section.) The slave asserts ACK on SDA. 8.
ADM1176
The master asserts a STOP condition on SDA to end the transaction.
1 2 3 4 5 6 78 SLAVE REGISTER REGISTER S RA A NP ADDRESS DATA ADDRESS
Figure 9. Command Byte Write
Table 8, Table 9, and give details of each extended register.
5. 6.
Table 7. Extended Register Addresses
A6 0 0 0 A5 0 0 0 A4 0 0 0 A3 0 0 0 A2 0 0 0 A1 0 1 1 A0 1 0 1 Extended Register ALERT_EN ALERT_TH CONTROL
7.
Table 8. ALERT_EN Register Operations
Bit 0 1 2 3 4 Default 0 0 1 0 0 Name EN_ADC_OC1 EN_ADC_OC4 EN_HS_ALERT EN_OFF_ALERT CLEAR Function Enabled if a single ADC conversion on the I channel has exceeded the threshold set in the ALERT_TH register Enabled if four consecutive ADC conversions on the I channel have exceeded the threshold set in the ALERT_TH register Enabled if the hotswap has either latched off, or entered a cool down cycle, because of an overcurrent event Enable an ALERT if the HS operation is turned off by a transition which de-asserts the ON pin, or by an operation which writes the SWOFF bit high. Clears the ON_ALERT, HS_ALERT and ADC_ALERT status bits in the STATUS register. These may immediately reset if the source of the alert has not been cleared, or disabled with the other bits in this register. This bit self-clears to 0 after the STATUS register bits have been cleared.
Table 9. ALERT_TH Register Operations
Bit 7:0 Default FF Function The ALERT_TH register sets the current level at which an alert will occur. Defaults to ADC full-scale. ALERT_TH 8-bit number corresponds to the top 8-bits of the current channel data.
Table 10. CONTROL Register Operations
Bit 0 Default 0 Name SWOFF Function Force hotswap off. Equivalent to de-asserting the ON pin.
Rev. PrD | Page 13 of 16
ADM1176
READ VOLTAGE AND/OR CURRENT DATA BYTES
The ADM1176 can be set up to provide information in three different ways (see Write Command Byte section above). Depending on how the device is configured the following data can be read out of the device after a conversion (or conversions): 1. Voltage and Current Readback. The ADM1176 will digitize both voltage and current. Three bytes will be read out of the device in the following format: Table 11.
Byte 1 2 3 Contents Voltage MSBs Current MSBs LSBs B7 V11 I11 V3 B6 V10 I10 V2 B5 V9 I9 V1 B4 V8 I8 V0 B3 V7 I7 I3 B2 V6 I6 I2 B1 V5 I5 I1 B0 V4 I4 I0
1
Preliminary Technical Data
8. The master receives the third data byte. 9. The master asserts NO ACK on SDA. 10. The master asserts a STOP condition on SDA and the transaction ends.
For the cases where the master is reading voltage only or current only, only two data bytes will be read and events 7 and 8 above will not be required.
2
3
4
5
6
7
8
9 10
SLAVE R A DATA 1 A DATA 2 A DATA 3 N P S ADDRESS
Figure 10. Three Byte Read fromADM1176
2. Voltage Readback. The ADM1176 will digitize voltage only. Two bytes will be read out of the device in the following format: Table 12.
Byte Contents 1 Voltage MSBs 2 Voltage LSBs B7 B6 B5 B4 B3 B2 V11 V10 V9 V8 V7 V6 V3 V2 V1 V0 0 0 B1 V5 0 B0 V4 0
1
2
3
4
5
6
78
SLAVE REGISTER REGISTER S RA A NP ADDRESS DATA ADDRESS
Figure 11. Two Byte Read fromADM1176
READ STATUS REGISTER
A single register of status data can also be read from the ADM1176.
3. Current Readback. The ADM1176 will digitize current only. Two bytes will be read out of the device in the following format: Table 13.
Byte Contents 1 Current MSBs 2 Current LSBs B7 I11 I3 B6 I10 I2 B5 B4 B3 B2 I9 I8 I7 I6 I1 I0 0 0 B1 I5 0 B0 I4 0
1. The master device asserts a START condition on SDA. 2. The master sends the 7-bit slave address followed by the read bit (high).
3. The addressed slave device asserts ACK on SDA. 4. The master receives the status byte. 5. The master asserts ACK on SDA.
1 2 3 4 5 SLAVE S R A DATA 1 A ADDRESS
The following series of events occur when the master receives three bytes (voltage and current data) from the slave device: 1. The master device asserts a START condition on SDA. 2. The master sends the 7-bit slave address followed by the read bit (high).
Figure 12. Status Read fromADM1176
3. The addressed slave device asserts ACK on SDA. 4. The master receives the first data byte. 5. The master asserts ACK on SDA. 6. The master receives the second data byte. 7. The master asserts ACK on SDA.
Table 14 shows the ADM1176 status registers in detail. Note that bits 1, 3 and 5 are cleared by writing to bit 4 of the ALERT_EN register (CLEAR).
Rev. PrD | Page 14 of 16
Preliminary Technical Data
Table 14. Status Byte Operations
Bit 0 1 2 Name ADC_OC ADC_ALERT HS_OC
ADM1176
3 4 5
HS_ALERT OFF_STATUS OFF_ALERT
Function An ADC based overcurrent comparison has been detected on the last 3 conversions An ADC based overcurrent trip has happened, which has caused the ALERT. Cleared by writing to bit 4 of the ALERT_EN register. The hotswap is off due to an analog overcurrent event. On parts which latch off, this will be the same as the HS_ALERT status bit (if EN_HS_ALERT=1). On the retry parts this will indicate the current state--a 0 could indicate that the data was read during a period when the device is retrying, or that it has successfully hotswapped by retrying after at least one overcurrent timeout. The hotswapper has failed since the last time this was reset. Cleared by writing to bit 4 of the ALERT_EN register. The state of the ON pin. Set to 1 if the input pin is de-asserted. Can also be set to 1 by writing to the SWOFF bit of the CONTROL register. An alert has been caused either by the ON pin or the SWOFF bit. Cleared by writing to bit 4 of the ALERT_EN register.
KELVIN SENSE RESISTOR CONNECTION
SENSE RESISTOR
When using a low-value sense resistor for high current measurement the problem of parasitic series resistance can arise. The lead resistance can be a substantial fraction of the rated resistance making the total resistance a function of lead length. This problem can be avoided by using a Kelvin sense connection. This type of connection separates the current path through the resistor and the voltage drop across the resistor. Figure 13 below shows the correct way to connect the sense resistor between the VCC and SENSE pins of the ADM1176.
CURRENT FLOW FROM SUPPLY
CURRENT FLOW TO LOAD
KELVIN SENSE TRACES
VCC
SENSE
ADM1176
Figure 13. Kelvin Sense Connections
Rev. PrD | Page 15 of 16
ADM1176
OUTLINE DIMENSIONS
0.122 (3.10) 0.114 (2.90)
10 6
Preliminary Technical Data
0.122 (3.10) 0.114 (2.90)
1 5
0.199 (5.05) 0.187 (4.75)
PIN 1 0.0197 (0.50) BSC 0.120 (3.05) 0.112 (2.85) 0.037 (0.94) 0.031 (0.78) 0.006 (0.15) 0.002 (0.05) 0.012 (0.30) 0.006 (0.15) 0.043 (1.10) MAX SEATING PLANE 0.009 (0.23) 0.005 (0.13) 6o o 0 0.028 (0.70) 0.016 (0.40) 0.120 (3.05) 0.112 (2.85)
Figure 14. 10-Lead MSOP Package (RM-10) Dimensions shown in millimeters
ORDERING GUIDE
Model ADM1176-1ARMZ-R7 ADM1176-2ARMZ-R7
1
Hotswap Retry Option Automatic Retry Version Latched Off Version
Brand M5U M5V
Temperature Range -40C to +85C -40C to +85C
Package Description MSOP-10 MSOP-10
Package Outline RM-10 RM-10
Z = Pb-free part.
Rev. PrD | Page 16 of 16
PR06046-0-5/06(PrD)

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